PMM Online Simulation: Boron

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Running a dopant-defect simulation using PMM/DOPDEES.

This is a copyrighted software. The models used in this simulation are not available for online viewing. Contact srini@bu.edu

The output of this simulation can be viewed as a .PNG file after the run. It is also available as a data file for download. Maximum allowed simulation time is 5 mins. Any simulation that takes longer will be killed.

Use Only CGS Units

Boron

Select one or all the four possible ways to initiate the initial boron conentration

Enter Initial (background) Concentration e.g. 1e15:
Use Gaussian analytic implant model
- Enter implant dose (cm^-2) e.g. 1e14 [default: 1e2]
- Enter Rp of the implant (cm) [default: 0.25e-4]
- Enter projected straggle (standard deviation) (cm)[default:2e-6]
Use Implant Data i.e. if you want to use from implant database
You can upload a implant data file (Format: Depth(cm) Concentration(cm-3)). To avoid errors during interpolation add Depth upto atleast 1 cm.
Enter the implant file:

Note: Total B = initial + implant file + implant data + gaussian

Interstitials

Enter Plus 'N'(default: 1)

Grid Specification

Carefully select a grid based on the implant input you specified.

Choose Ultra Low Energy (ULE) ( for B < 2 keV), Medium Energy (ME) for B < 80 keV, High Energy (HE) for more suited for larger implant energies

ULEMEHE

Models

Select diffusion model to be either 'fermi' or full-coupled (3-stream) or five-stream model
Note: Fermi model has no point-defect interactions. Full-cpl includes point-defects and hence needs to be used for atleast using interstitial cluster models. Five-stream is the most physical approach and should be the preferred model.
fermifullfive
Include interstitial cluster models (atleast full cpl should have been selected):
NOYES
Include boron clustering models. Select either a cluster model (b3i) or a solid solubility model (sss) or both. Note however that the B3I option (hence also BOTH) can only be used with the five-stream model.
NONEB3ISSSBOTH

Simulation Variables

Sorry no ramps for now
Carefully select these if you are only testing, to avoid long simulation times.
Enter Temperature for simulation (C)[default: 800 C, Max: 1150 C]
Enter time for experiment (in seconds) [default: 60 s, Max: 900 s]
endformPlease wait while running dopdees

Average run times (using most physical models)(single simulation using a single processor)

2e14, 40keV B 800C, 60s: 70 s
1e15, 1keV B 1050C,10s: 80 sec

[Check simulation output at][Once complete download output file(s):]

Remember to reload PNG Image of Ouput

Srini Chakravarthi

Last modified Nov 9, 1999