EE 482: Semiconductor Devices
Winter Quarter 2010
Monday, Tuesday, Wednesday, Friday 3:30-4:20pm, EEB 026
Instructor: Scott Dunham
Office: EEB 218
Phone: 543-2189
E-mail: dunham@ee.washington.edu
Office hours (tentative): M 9-10am, F 2-3pm
TA: Armin Yazdani
Office: EEB 253F
E-mail: ayazdani@u.washington.edu
Office hours: Th 3-4pm
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Course Description: Fundamentals of semiconductor theory: carrier
diffusion and drift; concept of direct and indirect energy gap materials,
effective mass of mobile carriers; device physics: homo- and heterojunctions,
operating principles of bipolar junction, and MOS field-effect transistors.
4 class hours. 4 credits.
Text: Device Electronics for integrated Circuits, 3rd Edition, Muller, Kamins and Chan
Optional Supplemental Text: Advanced Semiconductor Fundamentals, Pierret
Prerequisite:
EE 331 (Devices and Circuits I)
Course Information (PDF)
Course Syllabus (PDF)
Homeworks
-
Homework #1 Solutions (PDF).
-
Homework #2 Solutions (PDF).
-
Homework #3 Solutions (PDF).
-
Homework #4 Solutions (PDF).
-
Homework #5 Solutions (PDF).
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Homework #6 Solutions (PDF).
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Homework #7 Solutions (PDF).
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Homework #8 Solutions (PDF).
Handouts
Constants and Parameters (PDF)
Notes on
Semiconductor Devices in Equilibrium (PDF)
Additional Notes on Quantum Mechanics (PDF).
Notes on
Movement of Free Carriers (PDF)
Mobility and Diffusivity versus Total Ionized Dopant Concentration (PDF)
Notes on
Semiconductor Devices in Nonequilibrium
(PDF)
Notes on
Metal Semiconductor Junctions (PDF)
Notes on
PN Junctions (PDF)
Notes on
MOS Capacitors (PDF)
Notes on
MOS Transistors (PDF)
Additional Notes on MOSFET currents based on linearized depletion
charge (PDF)
Additional Notes on
Inversion Layer Mobility (PDF).
Mobility in inversion layers is reduced due to interface scattering,
carrier-carrier scattering and quantum confinement effects. It has
been found experimentally that mobility is nearly independent of
substrate doping and instead depends primarily on the average vertical
electric field in the inversion layer. This can be approximated by
Eeff = (Qd' + Qi'/2) / Ks Eo = (Vgs + Vt + 0.2V) / 6 Tox, where Tox is
the thickness of the oxide and 0.2V is a typical value for -2 * | Vfb
- 2 Phif |. See equation in notes for more more detailed
derivation. Thus, by knowing Vt and Vgs, you can estimate the channel
mobility using the "Universal Mobility Curve" given on top slide of
2nd page of notes.
Notes on
Bipolar Junction Transistors (PDF)
Links
Exams
First Exam to be held in class Wednesday, February 2.
- Example Exam 1 (PDF).
- Example Exam 1 Solutions (PDF).
- Most relevant ASF (Pierret) problems: 2.3, 3.4, 3.5, 4.3, 4.8, 4.10, 4.11, 4.12, 4.13, 6.1.
- Another Example Exam 1 (PDF).
- Another Example Exam 1 Solutions (PDF).
- Exam 1 Solutions (PDF).
Second Exam to be given as take-home after class on Wednesday, March 2. Due 10am on Friday March 4.
- Example Exam 2 (PDF).
- Example Exam 2 Solutions (PDF).
- Another Example Exam 2 (PDF).
- Another Example Exam 2 Solutions (PDF).
- Take-home Exam 2 (PDF).
- Exam 2 Solutions (PDF).
Final Exam to be given as take-home posted on Monday evening,
March 14. Due at 3pm on Thursday March 17.
- Example Final Exam Problem (PDF).
Note that in different years, the relative emphasis of topics changes
(in the year of this exam, much more time was spent on BJTs).
Doping profile in Problem 3 is a p-nu-n junction with doping of 10^18 on
p-side, 10^16 in lightly doped n (nu) region with width of 0.2 micron and
doping of 10^17 in n-region.
- Example Final Exam Solutions (PDF)
- Another Example Final Exam (PDF)
- Another Example Final Exam Partial Solutions (PDF)
- Take-home Final (PDF).