#SOI Implant Diffusion
#Simulate the diffusion of impurities and point defects
# using Sentaurus Process, sprocess



line x  location=0    spacing=0.02  tag=SiDevTop
line x  location=0.5 spacing=0.10  tag=SiDevBot
line x  location=0.75 spacing=0.75  tag=OxBot

line y  location=0    spacing=0.3   tag=Left
line y  location=2    spacing=0.03
line y  location=6    spacing=0.05   tag=Right

region silicon xlo=SiDevTop xhi=SiDevBot ylo=Left yhi=Right field=boron concentration=1e18
region oxide   xlo=SiDevBot xhi=OxBot    ylo=Left yhi=Right 

init wafer.orient=100

#Deposit PR and etch to make implant mask
#deposit  photoresist isotropic thickness=1.5<um>
#mask name=implant_mask left=-0.2<um> right=4<um>
#etch photoresist type=anisotropic thickness=1.5<um> mask=implant_mask
 

#Implant phosphorus
implant phosphorus energy=5<keV> dose=2e15<cm-2> tilt=0 rotation=0

plot.2d grid 

#Removes all exposed PR
strip photoresist


#Save all variables analyzed at x = 0.1um depth in silicon for Inspect
WritePlx SiRidge_implant.plx x=0.1

#Save the structure in sprocess format to use for subsequent diffusions
struct outfile=GEO_SiRidges


#Specify diffusion method to the Fermi model (also Pair (3-stream) or React (5-stream))
pdbSet Silicon Dopant DiffModel Fermi

#Perform the diffusion
diffuse temperature=900<C> time=1<hr>


#Make full structure (not just half) to save
transform reflect right

#Export data to make plot with tecplot_sv
struct tdr=SiRidge_1000c_2hr

#Extract layers, junction depth
#layers x=5.9 name=DopingConcentration
#interpolate silicon name=phosphorus val=1e18 x=5.9

#Save all variables analyzed at x = 0.125um depth in silicon
WritePlx SiRidge_diff2hr.plx x=0.125


#to plot output and allow for interactive tecplotting, command: tecplot_sv -s:ipc
plot.tec start
plot.tec loadfile=SiRidge_1000c_2hr.tdr


#Make 2d bw plot of grid -> causes error in xterm, no colors
plot.2d grid