EE 539B

Physics and Modeling of VLSI Fabrication

Winter Quarter 2001
Tuesday, Thursday 9:30-11:30am
Mechanical Engineering Building (MEB) 234

Instructor: Scott Dunham


This is a new course to be offered for the second time Winter Quarter 2001 under the EE 539 label (Advanced Topics in Solid-State Electronics). A proposal is in the works to make it a regular course offering crosslisted in EE and MSE. The course is focused on understanding CMOS technology at the current state-of-the-art and beyond, and will provide the physical background behind modern VLSI technology leading to an understanding of process interactions and process integration. Process simulation using commercial TCAD tools will be used extensively to illustrate and explore the technology. A simulation project will be required along with a midterm, final and homeworks (which will also have simulation problems).

Target Audience: Graduate students and advanced undergraduates in EE, materials science, physics, chemical engineering, mechanical engineering, chemistry, etc. interested in Microtechology and/or VLSI CAD.

Course Description: Physics of VLSI fabrication technology, with emphasis on process modeling and simulation. CMOS process sequences, point defects and diffusion, ion implantation and annealing, film growth kinetics, deposition and etching, advanced photolithography techniques. Process interactions and process integration. Extensive use of process simulation software for both class examples and assignments. 4 class. 4 cr.

Text: Silicon VLSI Technology: Plummer, Deal and Griffin

Prerequisites:
EE 482 (Semiconductor Devices) should have familiarity with basic operation of MOS devices,
EE 486 (Fundamentals of Integrated Circuit Technology) or equivalent exposure to basics of photolithography and diffusion/reaction problems,
or consent of instructor