EE 531

Semiconductor Devices & Device Simulation
Physics and Modeling of Nanoscale VLSI Devices

Winter Quarter 2005
Tuesday and Thursday, 12:30-2:20pm
Room EE 042

Instructor: Scott Dunham


The course is aimed at understanding nanoscale semiconductor device operation, emphasizing CMOS technology at the current state-of-the-art and beyond. The focus of the course is on submicron MOS devices and what happens as these devices get smaller and faster. Device simulation using commercial TCAD tools will be used extensively to illustrate and explore device behavior. A simulation project will be required along with a midterm, final and homeworks (which will also have simulation problems).

Target Audience: Graduate students and advanced undergraduates in electrical engineering, computer engineering and physics interested in VLSI devices and circuits.

Course Description: Study of device phenomena in very small and high-speed devices including effects of scaling, interfaces, and high doping. Control of electrical characteristics (threshold voltage, breakdown voltage, on/off currents, current gain, switching speed) in small MOS structures. Extensive use of device simulation software. 4 class hours. 4 credits.

Texts: "Fundamentals of Carrier Transport," by Mark Lundstrom, 2000.
"Fundamentals of Modern VLSI Devices" by Yuan Taur and Tak Ning, 1998

Prerequisites: EE 482 (Semiconductor Devices) or equivalent